MW6S004NT1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc)
?28
?16
?20
?24
1990
1930
IRL
Gps
f, FREQUENCY (MHz)
Figure 3. Two-Tone Wideband Performance
@ Pout
= 2 Watts Avg.
1980
1970
1960
1950
1940
18.4
18.2
?35
34
33
32
?31
?33
η
D
, DRAIN
EFFICIENCY (%)
ηD
18
17.8
17.6
17.2
16.4
16.8
17.4
?32
?30
31
?12
IM3
Pout, OUTPUT POWER (WATTS) PEP
14
20
1
IDQ
= 75 mA
19
17
16
10 20
Figure 4. Two-Tone Power Gain versus
Output Power
10
?80
?10
0.01
7th Order
VDD
= 28 Vdc, I
DQ
= 50 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
Two?Tone Measurements
5th Order
3rd Order
1
?20
?30
?40
?50
?60
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion Products
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
G
ps
, POWER GAIN (dB)
1 10010
?60
?25
0.1
7th Order
TWO?TONE SPACING (MHz)
5th Order
3rd Order
?30
?35
?40
?45
?50
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
26
47
P3dB = 38.22 dBm (6.637 W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 50 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
43
41
37
35
33
16 18 2220
Actual
Ideal
24
14
Figure 7. Pulsed CW Output Power versus
Input Power
IMD, INTERMODULATION DISTORTION (dBc)
P
out
, OUTPUT POWER (dBm)
18
50 mA
62.5 mA
P1dB = 37.61 dBm (5.768 W)
?55
0.01
VDD
= 28 Vdc, P
out
= 2 W (Avg.)
IDQ
= 50 mA, 100 kHz Tone Spacing
17
16.6
30
?34
?8
15
0.1
VDD
= 28 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
Two?Tone Measurements
37.5 mA
25 mA
?70
0.1
VDD
= 28 Vdc, P
out
= 2 W (Avg.), I
DQ
= 50 mA
(f1 + f2)/2 = Center Frequency of 1960 MHz
45
39
P6dB = 38.73 dBm (7.465 W)
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